description the ESD0506M8 is a low capacitance tvs array, utiliz ing leading monolithic silicon technology to provide fa st re- sponse time and low esd clamping voltage, making th is device an ideal solution for protecting voltage sen sitive high-speed data lines. the ESD0506M8 has low capaci- tance with a typical value at 8pf, and complies wit h the iec 61000-4-2 (esd) standard with 15kv air and 8k v contact discharge. it is assembled into a 8-pin lea d-free so-8 package. the combination of small size, low ca - pacitance and high level of esd protection makes it ideal for cellular, notebooks, desktops, and other portab le ap- plication. features low capacitance: 8pf typical (i/o to gnd) ultra low leakage: na level low operating voltage: 5v low clamping voltage up to 6 lines protects jedec ttsop-8 package complies with following standards: C iec 61000-4-2 (esd) immunity test air discharge: 15kv contact discharge: 8kv C iec61000-4-4 (eft) 40a (5/50ns) rohs compliant 6-line low capacitance tvs diode array part number packaging reel size ESD0506M8 2500/tape & reel 13 inch dot indicates pin1 circuit schematic dimensions and pin configuration mechanical characteristics package: tssop-8 lead finish: matte tin case material: green molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 3 per j-std-020 terminal connections: see diagram below marking information: see below applications cellular handsets and accessories personal digital assistants notebooks and handhelds portable instrumentation digital cameras peripherals audio players keypads, side keys, lcd displays marking information ordering information 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 pin schematic rev : 01.06.2014 1/4 www.leiditech.com ESD0506M8 5v06u = device marking code 5v06u 01 03 548
absolute maximum ratings (t a =25c unless otherwise specified) electrical characteristics (t a =25c unless otherwise specified) parameter symbol value unit peak pulse power (8/20s) ppk 25 w peak pulse current (8/20s) i pp 2 a esd per iec 61000?4?2 (air) esd per iec 61000?4?2 (contact) v esd 15 8 kv operating temperature range t j ?55 to +125 c storage temperature range tstg ?55 to +150 c parameter symbol min typ max unit test condition reverse working voltage v rwm 5 v breakdown voltage v br 6 v i t = 1ma, any i/o to gnd reverse leakage current i r 0.1 a v rwm = 5v clamping voltage v c 10.5 v i pp = 1a (8 x 20s pulse) clamping voltage v c 12.5 v i pp = 2a (8 x 20s pulse) junction capacitance c j 8 pf vr = 0v, f = 1mhz, any i/o to gnd note 1: i/o pins are 1, 2, 3, 4, 5 and 8. gnd pins are 6, 7. rev : 01.06.2014 2/4 www.leiditech.com ESD0506M8
typical performance characteristics (t a =25c unless otherwise specified) junction capacitance vs. reverse voltage peak pulse power vs. pulse time power derating curve 8 x 20us pulse waveform esd clamping voltage 8 kv contact per iec61000?4?2 0 20 40 60 80 100 120 0 25 50 75 100 125 150 % of rated power ambient temperature_ta( ) 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 % of peak pulse current time_t(us) 0.01 0.1 1 10 0.1 1 10 100 1000 peak pulse power_ppp (w) pulse duration_tp (us) 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 junction capacitance_cj(pf) reverse voltage_vr(v) rev : 01.06.2014 3/4 www.leiditech.com ESD0506M8
tssop-8 package outline drawing contact information rev : 01.06.2014 4/4 www.leiditech.com shanghai leiditech electronic co.,ltd email: sale1@leiditech.com tel : +86 - 021 50828806 fax : +86 - 021 50477059 ESD0506M8 * soldering footprint
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